Emergent Relativistic Effects in Condensed Matter
From Fundamental Aspects to Electronic Functionality

Selected Publications

back to overview

Emergence of anisotropic Gilbert damping in ultrathin Fe layers on GaAs (001)

The particularly simple single crystalline interface of Fe/GaAs(001) enables an in depth study of interfacial spin-orbit fields (iSOFs), caused by the reduced symmetry at the interface. The C2v-symmetry is expressed in an anisotropic magneto-optic response, a contribution to the crystalline anisotropic magneto-resistance and in an anisotropy of the intrinsic Gilbert damping parameter [1]. iSOFs enable the manipulation of the magnetization through an in-plane charge current. At this particular interface the iSOFs can be tuned by a gate voltage [2].
[1] L. Chen, S. Mankovsky, S. Wimmer, M. A. W. Schoen, H. S. Körner, M. Kronseder, D. Schuh, D. Bougeard, H. Ebert, D. Weiss and C. H. Back. Nature Physics 14, 490–494 (2018).
[2] L. Chen, M. Gmitra, M. Vogel, R. Islinger, M. Kronseder, D. Schuh, D. Bougeard, J. Fabian, D. Weiss and C. H. Back. Nature Electronics 1, 350–355 (2018).




SFB 1277
Doris Meier
Universit├Ąt Regensburg



© 2019 sfb1277-regensburg.de

to top