Emergence of anisotropic Gilbert damping in ultrathin Fe layers on GaAs (001)

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L. CHen, S. Mankovsky, S. Wimmer, M. A. Schoen, H. S. Körner, M. Kronseder, D. Schuh, D. Bougeard,
H. Ebert, D. Weiss, C. H. Back

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Nature Physics 14, 490–494 (2018)

The particularly simple single crystalline interface of Fe/GaAs(001) enables an in depth study of interfacial spin-orbit fields (iSOFs), caused by the reduced symmetry at the interface. The C2v-symmetry is expressed in an anisotropic magneto-optic response, a contribution to the crystalline anisotropic magneto-resistance and in an anisotropy of the intrinsic Gilbert damping parameter [1]. iSOFs enable the manipulation of the magnetization through an in-plane charge current. At this particular interface the iSOFs can be tuned by a gate voltage [2].
[1] L. Chen, S. Mankovsky, S. Wimmer, M. A. W. Schoen, H. S. Körner, M. Kronseder, D. Schuh, D. Bougeard, H. Ebert, D. Weiss and C. H. Back. Nature Physics 14, 490–494 (2018).
[2] L. Chen, M. Gmitra, M. Vogel, R. Islinger, M. Kronseder, D. Schuh, D. Bougeard, J. Fabian, D. Weiss and C. H. Back. Nature Electronics 1, 350–355 (2018).

https://www.nature.com/articles/s41567-018-0053-8