Dielectric Engineering of Electronic Correlations in a van der Waals Heterostructure

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P. Steinleitner, P. Merkl, A. Graf, P. Nagler, K. Watanabe, T. Taniguchi, J. Zipfel, C. Schüller, T. Korn,
A. Chernikov, S. Brem, M. Selig, G. Berghäuser, E. Malic

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Nano Letters

We demonstrate how a capping layer of hexagonal boron nitride renormalizes the internal structure of excitons in a WSe2 monolayer using intraband transitions. Our results provide key insight into the effect of nonlocal screening on electron−hole correlations and open new possibilities of dielectric engineering of van der Waals heterostructures.
 

 

https://pubs.acs.org/doi/10.1021/acs.nanolett.7b05132